Datasheet > PTVA084007NF

PTVA084007NF

更新时间： 2024-12-01 15:19:23

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	610K
描述
High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz

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PTVA084007NF 数据手册

PTVA084007NF

Thermally-Enhanced High Power RF LDMOS FET

370 W, 48 V, 755 – 805 MHz

Description

The PTVA084007NF is a 370-watt (P_3dB) LDMOS FET manufactured

with the 48-V LDMOS process. It is designed for use in multi-

standard cellular power ampliﬁer applications. It features a

single-ended design and input and output matching that allow

for use from 755 MHz to 805 MHz.

Package Types: PG-HBSOF-4-2

Single-carrier WCDMA Drive-up

Features

V_DD= 48 V, I_DQ(MAIN)= 800 mA, ƒ = 805 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

•

Broadband internal input and output matching

Target CW performance, 805 MHz, 48 V, single side

- Output power at P_3dB= 370 W

- Eﬀiciency = 64%

Gain

- Gain = 20.8 dB

•

Capable of handling 10:1 VSWR @ 48 V, 100 W

(CW) output power

•

Integrated ESD protection

Human Body Model class 2 (per ANSI/ESDA/

JEDEC JS-001)

Efficiency

-20

-40

-60

•

Low thermal resistance

Pb-free and RoHS compliant

PAR @ 0.01% CCDF

ptva084007nf_g1

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in the production test ﬁxture)

V_DD= 48 V, I_DQ= 800 mA, P_OUT= 80 W avg, ƒ₁= 805 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF.

Characteristic

Symbol

G_ps

Min.

Typ.

23.6

Max.

—

Unit

Gain

Drain Efficiency

h_D

—

Adjacent Channel Power Ratio

Output PAR @ 0.01% CCDF, 20 MHz

ACPR

OPAR

—

–31.6

–28.5

—

dBc

6.4

Note:

All published data at T_CASE= 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 04.2, 2022-02-13

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...9

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与PTVA084007NF相关器件

型号	品牌	获取价格	描述	数据表
PTVA092407NF	CREE	获取价格	Thermally-Enhanced High Power RF LDMOS FET 24
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PTVA093002TC	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 30
PTVA093002TCV1R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 30
PTVA093002TCV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 30
PTVA101K02EV	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EV-V1	MACOM	获取价格	High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz
PTVA101K02EVV1R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EVV1R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EVV1R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz

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