Datasheet > PTVA101K02EV-V1

PTVA101K02EV-V1

更新时间： 2024-11-30 15:19:19

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	522K
描述
High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz

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PTVA101K02EV-V1 数据手册

PTVA101K02EV

Thermally-Enhanced High Power RF LDMOS FET

1000 W, 50 V, 1030 / 1090 MHz

Description

The PTVA101K02EV LDMOS FET is designed for use in power amplifier

applications in the 1030 MHz / 1090 MHz frequency band. Features in-

clude high gain and thermally-enhanced package with bolt-down flange.

Manufactured with an advanced LDMOS process, this device provides

excellent thermal performance and superior reliability.

PTVA101K02EV

Package H-36275-4

Features

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 150 mA, T_CASE= 25°C

ƒ = 1030 MHz

•

Broadband input matching

High gain and eﬀiciency

Integrated ESD protection

Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

128µs, 10%

128µs, 1%

MODE-S

•

Low thermal resistance

Pb-free and RoHS compliant

Capable of withstanding a 10:1 load mismatch

(all phase angles) at 1000 W under MODE–S

pulse condition, (32µS ON / 18µS OFF) X 80,

LTDF = 6.4%.

Gain

Efficiency

a101k02ev_1-1

P_out(dBm)

RF Characteristics

Pulsed RF Performance (tested in the test fixture)

= 50 V, I = 0.15 A, P

= 900 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle

OUT

Characteristic

Gain

Symbol

Min

Typ

Max

Unit

Drain Efficiency

h_D

—

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 04, 2023-07-07

For further information and support please visit:

https://www.macom.com/support

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