Datasheet > PTVA120251EAV2R0XTMA1

PTVA120251EAV2R0XTMA1

更新时间： 2024-12-01 01:01:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1628K
描述
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 â 1400 MHz

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PTVA120251EA

Thermally-Enhanced High Power RF LDMOS FET

25 W, 50 V, 500 – 1400 MHz

Description

The PTVA120251EA LDMOS FET is designed for use in power ampli-

fier applications in the 500 MHz to 1400 MHz frequency band.Features

include high gain and a thermally-enhanced package with bolt-down

PTVA120251EA

Package H-36265-2

flange. Manufactured with Infineon's advanced LDMOS process, this

device provides excellent thermal performance and superior reliability.

Features

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 20 mA, T_CASE= 25°C

300 µs pulse width, 12% duty cycle

•ꢀ Unmatched input and output

•ꢀ High gain and efficiency

•ꢀ Integrated ESD protection

Efficiency

•ꢀ ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001

•ꢀ Low thermal resistance

•ꢀ Excellent ruggedness

•ꢀ Pb-free and RoHS-compliant

Output Power

•ꢀ Capable of withstanding a 10:1 load mismatch

(all phase angles) at P

conditions

= 25 W, under CW

OUT

1200 MHz

1300 MHz

1400 MHz

1200 MHz

1300 Mhz

1400 MHz

a120251ea-v2-gr1a```

Input Power (dBm)

RF Characteristics

Typical RF Performance (not subject to production test, veriﬁed by design/characterization in Inﬁneon test ﬁxture)

= 50 V, I = 0.02 A, Input signal (t = 5 ns, t = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test

1dB

3dB

Mode of operation

IRL

(dB)

Gain

(dB)

16.4

16.0

15.8

Eff

(%)

Gain

(dB)

14.4

14.0

13.8

Eff

(%)

OUT

droop(pulse)

(MHz)

1200

1300

1400

(W)

dB @ 30 W

0.27

(ns)

Pulsed RF

0.20

0.24

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 14

Rev. 04.2, 2016-04-19

12 3 4 5 6 7...14

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