Datasheet > PTVA120501EAV1R0

PTVA120501EAV1R0

更新时间： 2024-11-30 15:48:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	729K
描述
RF Power Field-Effect Transistor,

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技术参数
数据手册

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PTVA120501EAV1R0 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.58	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

PTVA120501EAV1R0 数据手册

PTVA120501EA

Thermally-Enhanced High Power RF LDMOS FET

50 W, 50 V, 1200 – 1400 MHz

Description

The PTVA120501EA LDMOS FET is designed for use in power ampli-

ﬁer applications in the 1200 to 1400 MHz frequency band. Features

include high gain and thermally-enhanced package with bolt-down

ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this

device provides excellent thermal performance and superior reliability.

PTVA120501EA

Package H-36265-2

Features

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 50 mA, T_CASE= 25°C,

300 µs pulse width, 10% duty cycle

•

Broadband input matching

High gain and efﬁciency

Typical Pulsed CW performance, 1200 – 1400MHz,

50 V, 300 µs pulse width, 10 % duty cycle, class AB

- Output power at P

- Efﬁciency = 55%

- Gain = 16 dB

= 54 W

1dB

Efficiency

•

Integrated ESD protection

Low thermal resistance

Output Power

Pb-free and RoHS compliant

Capable of withstanding a 10:1 load mismatch

(all phase angles) at 50 W peak under RF pulse,

300 μS, 10% duty cycle.

1200 MHz

1300 MHz

1400 MHz

a120501ea_g1-1

P_IN(dBm)

RF Characteristics

Pulsed RF Performance (tested in Inﬁneon test ﬁxture)

= 50 V, I = 50 mA, P

= 50 W, ƒ = 1200 MHz, ƒ = 1300 MHz, ƒ = 1400 MHz, 300 μs pulse width, 10 % duty cycle

OUT

Characteristic

Gain

Symbol

Min

16.5

Typ

Max

—

Unit

Drain Efficiency

Return Loss

h_D

—

IRL

—

–10

–7

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 02.1, 2016-05-26

12 3 4 5 6 7...10

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