PTVA127002EV
Thermally-Enhanced High Power RF LDMOS FET
700 W, 50 V, 1200 – 1400 MHz
Description
PTVA127002EV
Package H-36275-4
The PTVA127002EV LDMOS FET is designed for use in power amplifier
applications in the 1200 to 1400 MHz frequency band. Features include
high gain and thermally-enhanced package with bolt-down flange.
Manufactured with an advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 300 mA, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
Features
•
•
•
•
Broadband input and output matching
High gain and efficiency
Integrated ESD protection
Human Body Model Class 2 (per ANSI/ESDA/JEDEC
JS-001)
Low thermal resistance
Excellent ruggedness
65
55
45
35
25
15
65
55
45
35
25
15
Output Power
•
•
•
•
Pb-free and RoHS compliant
Capable of withstanding a 10:1 load mismatch
(all phase angles) at 700 W peak under RF pulse,
300 µS, 10% duty cycle.
1200 MHz
1300 MHz
1400 MHz
Efficiency
a127002ev_g1-1
30 32 34 36 38 40 42 44 46 48
PIN (dBm)
RF Characteristics
Pulsed RF Performance (tested in the test fixture)
V
= 50 V, I = 150 mA per side, P
= 700 W, ƒ = 1200 MHz, ƒ = 1300 MHz, ƒ = 1400 MHz, 300 µs pulse width,
DD
DQ
OUT
1
2
3
12% duty cycle
Characteristic
Gain
Symbol
Min
15.5
50
Typ
16
Max
—
Unit
dB
G
ps
Drain Efficiency
Gain Flatness
hD
DG
IRL
56
—
%
—
1.0
–20
1.3
–11
dB
Return Loss
—
dB
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
1
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Rev. 05, 2023-07-10
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