Datasheet > PTVA123501EFC_15

PTVA123501EFC_15

更新时间： 2024-12-01 01:16:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1495K
描述
Thermally-Enhanced High Power RF LDMOS FETs

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PTVA123501EFC_15 数据手册

PTVA123501EC

PTVA123501FC

Thermally-Enhanced High Power RF LDMOS FETs

350 W, 50 V, 1200 – 1400 MHz

Description

The PTVA123501EC and PTVA123501FC LDMOS FETs are designed

for use in power ampliﬁer applications in the 1200 MHz to 1400 MHz

frequency band. Features include high gain and thermally-enhanced

package with slotted and earless ﬂanges.Manufactured with Inﬁneon's

advanced LDMOS process, these devices provide excellent thermal

performance and superior reliability.

PTVA123501EC

Package H-36248-2

PTVA123501FC

Package H-37248-2

Power Sweep, Pulsed RF

I_DQ= 150 mA, V_DD= 50 V, T_CASE= 25°C,

300 µs pulse width, 12% duty cycle

Features

•ꢀ Broadband internal input and output matching

•ꢀ High gain and efﬁciency

Output Power

•ꢀ Integrated ESD protection

•ꢀ Low thermal resistance

•ꢀ Excellent ruggedness

•ꢀ Pb-free and RoHS compliant

1200 MHz

1300 MHz

1400 MHz

•ꢀ Capable of withstanding a 10:1 load

mismatch (all phase angles) at 55.5 dBm

under pulsed conditions: 300 µs pulse width,

Efficiency

a123501ec_g1-1

12% duty cycle, V

= 50 V

P_IN(dBm)

RF Characteristics

Pulsed RF Performance (tested in Inﬁneon test ﬁxture)

= 50 V, I = 0.15 A, P

= 350 W, ƒ = 1200 MHz, ƒ = 1300 MHz, ƒ = 1400 MHz, 300 µs pulse width, 12% duty cycle

OUT

Characteristic

Gain

Symbol

Min

16.5

Typ

Max

—

Unit

Drain Efficiency

Return Loss

h_D

—

IRL

—

–12

–9

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 14

Rev. 05, 2015-07-07

12 3 4 5 6 7...14

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