Datasheet > PTVA127002EVV1XWSA1

PTVA127002EVV1XWSA1

更新时间： 2024-11-30 21:11:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	551K
描述
RF Power Field-Effect Transistor

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技术参数
数据手册

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PTVA127002EVV1XWSA1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

PTVA127002EVV1XWSA1 数据手册

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PTVA127002EV

Thermally-Enhanced High Power RF LDMOS FET

700 W, 50 V, 1200 – 1400 MHz

Description

The PTVA127002EV LDMOS FET is designed for use in power

ampliﬁer applications in the 1200 to 1400 MHz frequency band.

Features include high gain and thermally-enhanced package with

bolt-down ﬂange. Manufactured with Inﬁneon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

PTVA127002EV

Package H-36275-4

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 300 mA, T_CASE= 25°C,

300 µs pulse width, 12% duty cycle

Features

•ꢀ Broadband input and output matching

•ꢀ High gain and efﬁciency

•ꢀ Integrated ESD protection

Output Power

•ꢀ Human Body Model Class 2 (per ANSI/ESDA/

JEDEC JS-001)

•ꢀ Low thermal resistance

•ꢀ Excellent ruggedness

•ꢀ Pb-free and RoHS compliant

•ꢀ Capable of withstanding a 10:1 load mismatch

(all phase angles) at 700 W peak under RF pulse,

300 µS, 10% duty cycle.

1200 MHz

1300 MHz

1400 MHz

Efficiency

a127002ev_g1-1

30 32 34 36 38 40 42 44 46 48

P_IN(dBm)

RF Characteristics

Pulsed RF Performance (tested in Inﬁneon test ﬁxture)

= 50 V, I = 150 mA per side, P

= 700 W, ƒ = 1200 MHz, ƒ = 1300 MHz, ƒ = 1400 MHz, 300 µs pulse width,

OUT

12% duty cycle

Characteristic

Gain

Symbol

Min

15.5

Typ

Max

—

Unit

Drain Efficiency

Gain Flatness

Return Loss

h_D

IRL

—

1.0

–20

1.3

–11

—

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. 03.3, 2017-02-06

12 3 4 5 6 7...11

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