Datasheet > PTVA12025

PTVA12025

更新时间： 2024-03-03 10:11:03

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描述
High Power RF LDMOS FET 25 W; 500 - 1400 MHz

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PTVA12025 数据手册

PTVA120252MT

Thermally-Enhanced High Power RF LDMOS FET

25 W, 48 V, 500 – 1400 MHz

Description

The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use

in power ampliﬁer applications in the 500 MHz to 1400 MHz frequency

band. Features include high gain and a thermally-enhanced, surface-mount

package. Manufactured with an advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

Package Types: PG-SON-16

Features

Single-carrier WCDMA Drive-up

V_DD= 48 V, I_DQ= 95 mA, ƒ = 960 MHz

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

•

Unmatched

Target CW performance 960 MHz, 48 V,

combined outputs

- Output power at P_1dB= 25 W

- Gain = 19.8 dB

- Eﬀiciency = 64%

Gain

•

Capable of handling 10:1 VSWR @ 48 V, 20 W CW

output power

Efficiency

•

Integrated ESD protection

Human Body Model class 1C (per ANSI/ESDA/

JEDEC JS-001)

-25

-50

-75

PAR @ 0.01% CCDF

•

Low thermal resistance

Pb-free and RoHS compliant

ptva120252mt_g1

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in a the production test ﬁxture)

V_DD= 48 V, I_DQ= 87 mA, P_OUT= 5.5 W average, ƒ = 960 MHz, 3GPP WCDMA signal, 3.84 MHz bandwidth, 10 dB PAR @0.01% CCDF

Characteristic

Symbol

G_ps

Min.

18.5

Typ.

19.5

Max.

—

Unit

Linear Gain

Drain Efficiency

h_D

31.5

—

Adjacent Channel Power Ratio

ACPR

—

–33.5

–31

dBc

Note:

All published data at T_CASE= 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 04.1, 2022-02-13

For further information and support please visit:

https://www.macom.com/support

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