Datasheet > PTVA104501EHV1R0

PTVA104501EHV1R0

更新时间： 2024-12-01 01:05:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1192K
描述
Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 â 1215 MHz

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PTVA104501EHV1R0 数据手册

PTVA104501EH

Thermally-Enhanced High Power RF LDMOS FET

450 W, 50 V, 960 – 1215 MHz

Description

The PTVA104501EH LDMOS FET is designed for use in power ampli-

ﬁer applications in the 960 to 1215 MHz frequency band. Features

include high gain and thermally-enhanced package with bolt-down

ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this

device provides excellent thermal performance and superior reliability.

PTVA104501EH

Package H-33288-2

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 200 mA, T_CASE= 25°C,

128 µs pulse width, 10% duty cycle

Features

•ꢀ Broadband internal input and output matching

•ꢀ High gain and efﬁciency

Output power

Efficiency

•ꢀ Integrated ESD protection

•ꢀ Human Body Model Class 2 (per ANSI/ESDA/

JEDEC JS-001)

•ꢀ Low thermal resistance

•ꢀ Excellent ruggedness

•ꢀ Pb-free and RoHS compliant

960 MHz

1030 Mhz

1090 MHz

1150 MHz

•ꢀ Capable of withstanding a 10:1 load mismatch

(all phase angles) at 450 W peak under RF pulse,

128 µS, 10% duty cycle.

1215 MHz

a104501eh_g1

P_IN(dBm)

RF Characteristics

Pulsed RF Performance (tested in Inﬁneon test ﬁxture) (tested in Inﬁneon test ﬁxture)

= 50 V, I = 200 mA, P = 450 W (peak), ƒ = 960 MHz, ƒ = 1090 MHz, ƒ = 1215 MHz, RF pulse 128 µs,

OUT

10% duty cycle

Characteristic

Gain

Symbol

Min

Typ

17.5

Max

—

Unit

16.5

Drain Efficiency

Gain Flatness

Return Loss

h_D

IRL

—

0.85

–9.5

1.8

–6

—

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 9

Rev. 02.1, 2016-04-19

12 3 4 5 6 7...9

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