Datasheet > PTVA101K02EVV1R250XTMA1

PTVA101K02EVV1R250XTMA1

更新时间： 2024-12-01 01:05:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1246K
描述
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz

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PTVA101K02EV

Thermally-Enhanced High Power RF LDMOS FET

1000 W, 50 V, 1030 / 1090 MHz

Description

The PTVA101K02EV LDMOS FET is designed for use in power

ampliﬁer applications in the 1030 MHz / 1090 MHz frequency band.

Features include high gain and thermally-enhanced package with

PTVA101K02EV

Package H-36275-4

bolt-down ﬂange. Manufactured with Inﬁneon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

Features

Power Sweep, Pulsed RF

V_DD= 50 V, I_DQ= 150 mA, T_CASE= 25°C

= 1030 MHz

•ꢀ Broadband input matching

•ꢀ High gain and efﬁciency

•ꢀ Integrated ESD protection

•ꢀ Human Body Model Class 2 (per ANSI/ESDA/

JEDEC JS-001)

128µs, 10%

128µs, 1%

MODE-S

•ꢀ Low thermal resistance

•ꢀ Pb-free and RoHS compliant

•ꢀ Capable of withstanding a 10:1 load mismatch

(all phase angles) at 1000 W under MODE–S

pulse condition, (32µS ON / 18µS OFF) X 80,

LTDF = 6.4%.

Gain

Efficiency

a101k02ev_1-1

P_out(dBm)

RF Characteristics

Pulsed RF Performance (tested in Inﬁneon test ﬁxture)

= 50 V, I = 0.15 A, P = 900 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle

OUT

Characteristic

Gain

Symbol

Min

Typ

Max

Unit

Drain Efficiency

h_D

—

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 9

Rev. 02.1, 2016-04-19

12 3 4 5 6 7...9

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