Datasheet > PTVA092407NF-V2

PTVA092407NF-V2

更新时间： 2024-11-30 17:01:15

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	652K
描述
High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz

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PTVA092407NF-V2 数据手册

PTVA092407NF

Thermally-Enhanced High Power RF LDMOS FET

240 W, 48 V, 869 – 960 MHz

Description

The PTVA092407NF is a 240-watt LDMOS FET manufactured with the 48-V LDMOS

process. It is designed for use in multi-standard cellular power ampliﬁer applications.

It features a single ended design and input and output matching that allow for use

from 869 MHz to 960 MHz. Manufactured with an advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

Package Types: PG-HBSOF-4-2

Single-carrier WCDMA Drive-up

Features

V_DD= 48 V, I_DQ(MAIN)= 900 mA,

ƒ = 960 MHz, 3GPP WCDMA signal,

•

Broadband internal input and output matching

PAR = 10 dB, 3.84 MHz BW

Typical CW performance, 960 MHz, 48 V, 10 µs pulse

width, 10% duty cycle, single side

- Output power at P_1dB= 240 W

- Output power at P_3dB= 287 W

- Gain = 20 dB

- Eﬀiciency = 62%

Capable of handling 10:1 VSWR @ 48 V, 80 W CW

output power

Gain

•

Efficiency

•

Integrated ESD protection

Human Body Model class 2 (per ANSI/ESDA/

JEDEC JS-001)

Low thermal resistance

Pb-free and RoHS compliant

-20

-40

-60

PAR @ 0.01% CCDF

•

ptva092407nf_g1

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in the production test ﬁxture)

V_DD= 48 V, I_DQ= 900 mA, P_OUT= 80 W avg, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

G_ps

Min.

21.3

Typ.

22.5

Max.

—

Unit

Linear Gain

Drain Efficiency

h_D

—

Adjacent Channel Power Ratio

Output PAR @ 0.01% CCDF

ACPR

OPAR

—

–30

6.2

–28.5

—

dBc

5.7

Note:

All published data at T_CASE= 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 03.2, 2022-02-13

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...9

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与PTVA092407NF-V2相关器件

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PTVA093002TCV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 30
PTVA101K02EV	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EV-V1	MACOM	获取价格	High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz
PTVA101K02EVV1R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EVV1R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EVV1R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EVV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA102001EA-V1	MACOM	获取价格	High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz

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