Datasheet > PTVA093002TCV1R250

PTVA093002TCV1R250

更新时间： 2024-11-30 01:12:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	210K
描述
Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 â 960 MHz

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PTVA093002TC

Thermally-Enhanced High Power RF LDMOS FET

300 W, 50 V, 703 – 960 MHz

Description

The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in

multi-standard cellular power ampliﬁer applications, it can be used as

single-ended or in a Doherty conﬁguration.It features dual-path design,

input matching, and a thermally-enhanced surface-mount package.

Manufactured with Inﬁneon's advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

PTVA093002TC

Package H-49248H-4, formed leads

Features

Single-carrier 3GPP WCDMA

V_DD= 50 V, I_DQ= 400 mA, ƒ = 758 MHz

3.84 MHz bandwidth, 10 dB PAR

•

Typical CW performance in a combined-lead

50-ohm single-ended ﬁxture, 780 MHz, 50 V

- Output power at P

- Gain = 18.2 dB

- Efﬁciency = 52%

= 158 W

1dB

Efficiency

•

Typical pulsed CW performance in a combined-lead

50-ohm single-ended ﬁxture, 870 MHz, 50 V

Gain

- Output power at P

- Gain = 16.2 dB

- Efﬁciency = 50%

= 280 W

3dB

•

Integrated ESD protection, Human Body Model

class 2 (per JESD22-A114)

-20

-40

-60

PAR @ 0.01% CCDF

Capable of withstanding a 10:1 load mismatch at

50 V, 63 W (CW) output power

•

Low thermal resistance

a093002tc-gr1a

Pb-free and RoHS compliant

Average Output Power (dBm)

RF Specifications

Single-carrier WCDMA Characteristics (device with ﬂat leads tested in an Inﬁneon Doherty production test ﬁxture)

= 50 V, I = 400 mA, V = 1.9 V, P = 63 W average, ƒ = 803 MHz.

GSpeak

OUT

3GPP WCDMA signal: 3.84 MHz bandwidth, 10 dB PAR @0.01% CCDF.

Characteristic

Gain

Symbol

Min

17.5

Typ

18.5

Max

—

Unit

Drain Efficiency

Adjacent Channel Power Ratio

η_D

—

ACPR

—

–34

–32

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 04, 2014-06-16

12 3 4 5 6 7...10

中文翻译

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与PTVA093002TCV1R250相关器件

型号	品牌	获取价格	描述	数据表
PTVA093002TCV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 30
PTVA101K02EV	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EV-V1	MACOM	获取价格	High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz
PTVA101K02EVV1R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EVV1R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EVV1R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EVV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA102001EA-V1	MACOM	获取价格	High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz
PTVA104501EH	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 45
PTVA104501EH_16	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 45

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