Datasheet > PTVA042502FCV1R0XTMA1

PTVA042502FCV1R0XTMA1

更新时间： 2024-11-30 00:52:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	1375K
描述
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 â 806 MHz

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PTVA042502EC

PTVA042502FC

Thermally-Enhanced High Power RF LDMOS FET

250 W, 50 V, 470 – 806 MHz

Description

The PTVA042502EC and PTVA042502FC LDMOS FETs are designed

for use in power ampliﬁer applications in the 470 MHz to 806 MHz

frequency band. Features include high gain and thermally-enhanced

package with bolt-down or earless ﬂanges. Manufactured with Inﬁneon's

advanced LDMOS process, these devices provide excellent thermal per-

formance and superior reliability.

PTVA042502EC

Package H-36248-4

PTVA042502FC

Package H-37248-4

DVB-T Performance

Efficiancy, Gain and

IMD3 Shoulder vs Frequency

V_DD= 50 V, I_DQ= 800 mA, P_OUT= 55 W avg

Features

-23

-25

-27

-29

-31

-33

•ꢀ Input matched

•ꢀ Integrated ESD protection

•ꢀ Human Body Model Class 1C (per ANSI/

Efficiency

Gain

ESDA/JEDEC JS-001)

•ꢀ Low thermal resistance

•ꢀ RoHS compliant

•ꢀ Capable of withstanding a 10:1 VSWR at 55W

average power under DVB-T signal condition

ACPR

IMD Shoulder

ptva042502fc_g1

450 500 550 600 650 700 750 800 850

Frequency (MHz)

RF Characteristics

DVB-T (8K OFDM, 64QAM) Characteristics (tested in Inﬁneon test ﬁxture)

= 50 V, I = 800 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability

Characteristic

Average Output Power

Gain

Symbol

Min

—

Typ

Max

—

Unit

OUT

17.5

—

Drain Efficiency

25.5

–29.5

—

Adjacent Channel Power Ratio

ACPR

—

–25

dBc

(ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency)

All published data at T = 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 03.1, 2016-04-19

12 3 4 5 6 7...10

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