IGBT SPseries Six-Pack 50A 1200V
PTMB50B12C
CIRCUIT
OUTLINEDRAWING
Dimension(mm)
Approximate Weight : 190g
MAXMUM RATINGS (Tc=25°C)
Item
Symbol
PTMB50B12C
Unit
V
V
Collector-Emitter Voltage
Gate - Emitter Voltage
VCES
VGES
IC
1200
+/ - 20
50
100
DC
1 ms
Collector Current
A
ICP
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
PC
250
-40 to +150
-40 to +125
W
°C
°C
V
T
j
Tstg
VISO
Isolation Voltage Terminal to Base AC, 1 min.)
2500
Module Base to Heatsink
Bus Bar to Main Terminals
2
-
Mounting Torque
FTOR
N•m
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Symbol
ICES
IGES
VCE(sat)
VGE(th)
Cies
Test Condition
VCE=1200V,VGE=0V
VGE=+/- 20V,VCE=0V
IC=50A,VGE=15V
VCE=5V,IC=50mA
VCE=10V,VGE=0V,f=1MHz
Min.
-
-
-
4.0
-
Typ.
-
-
1.9
-
Max.
1.0
1.0
2.4
8.0
-
Unit
mA
µA
V
V
pF
4200
Rise Time
Turn-on Time
Fall Time
Turn-off Time
tr
ton
tf
VCC= 600V
-
-
-
-
0.25
0.40
0.25
0.80
0.45
0.70
0.35
1.10
RL= 12 ohm
RG= 20 ohm
VGE= +/- 15V
Switching Time
µs
toff
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
IF
IFM
Rated Value
Unit
A
DC
1 ms
50
100
Forward Current
Characteristic
Peak Forward Voltage
Reverse Recovery Time
Symbol
Test Condition
IF=50A,VGE=0V
Min.
-
-
Typ.
1.9
0.2
Max.
2.4
0.3
Unit
V
µs
VF
trr
IF=50A,VGE=-10V,di/dt=100A/µs
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Junction to Case
Min.
-
-
Typ.
-
-
Max.
0.5
0.1
Unit
IGBT
DIODE
Thermal Impedance
R
th(j-c)
°C/W