Datasheet > PTMC210124MD

PTMC210124MD

更新时间： 2024-09-14 01:24:15

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	593K
描述
Wideband LDMOS Two-stage Integrated Power Amplifier 12 W, 28 V, 1805 â 2200 MHz

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PTMC210124MD 数据手册

PTMC210124MD

Wideband LDMOS Two-stage Integrated Power Ampliﬁer

12 W, 28 V, 1805 – 2200 MHz

Description

The PTMC210124MD is a wideband, two-stage, LDMOS integrated

power ampliﬁer. It incorporates internal matching for operation from

1805 MHz to 2200 MHz, and dual independent outputs with 6 W of

output power each. It is available in a 14-lead plastic overmold pack-

age with gull wing leads.

PTMC210124MD

Package PG-HB1DSO-14-1

(formed leads)

Single-carrier WCDMA Drive-up

V_DD= 28 V, I_{DQ1A +}I_DQ1B= 34 mA,

I_{DQ2A +}I_DQ2B= 148 mA, ƒ = 2170 MHz,

3GPP WCDMA signal, PAR = 7.5 dB,

3.84 MHz BW

Features

•ꢀ On-chip matching for broadband operation

•ꢀ Typical CW performance, 2170 MHz, 28 V, com-

bined outputs

- Output power at P

- Gain = 30.5 dB

= 12 W

1dB

Gain

- Efﬁciency = 51.9%

•ꢀ Capable of handling 10:1 VSWR @28 V, 12 W (CW)

Efficiency

output power

•ꢀ Integrated ESD protection

•ꢀ Human Body Model Class 0B (per ANSI/ESDA/

JEDEC JS-001)

PAR @ 0.01% CCDF

•ꢀ Integrated temperature compensation

•ꢀ Pb-free and RoHS-compliant

ptmc210124md_g1

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)

= 28 V, I = I = 17 mA I = I = 73 mA P = 1.38 W avg, ƒ = 2170 MHz, 3GPP WCDMA signal,

DQ1A

DQ1B

, DQ2A

DQ2B

OUT

channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

Typ

30.5

Max

—

Unit

Drain Efﬁciency

Adjacent Channel Power Ratio

h_D

16.5

—

ACPR

—

–49.5

–47

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Rev. 03, 2018-05-19

4600 Silicon Drive

Durham, NC 27703

www.wolfspeed.com

12 3 4 5 6 7...10

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