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PSMN004-25P PDF预览

PSMN004-25P

更新时间: 2024-02-05 10:57:24
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
9页 104K
描述
N-channel logic level TrenchMOS transistor

PSMN004-25P 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):120 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0054 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PSMN004-25P 数据手册

 浏览型号PSMN004-25P的Datasheet PDF文件第2页浏览型号PSMN004-25P的Datasheet PDF文件第3页浏览型号PSMN004-25P的Datasheet PDF文件第4页浏览型号PSMN004-25P的Datasheet PDF文件第5页浏览型号PSMN004-25P的Datasheet PDF文件第6页浏览型号PSMN004-25P的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Very low on-state resistance  
• Fast switching  
VDSS = 25 V  
ID = 75 A  
• Low thermal resistance  
RDS(ON) 4.3 m(VGS = 10 V)  
g
RDS(ON) 5 m(VGS = 5 V)  
s
GENERAL DESCRIPTION  
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in  
each package at each voltage rating.  
Applications:-  
• d.c. to d.c. converters  
• switched mode power supplies  
The PSMN004-25P is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PSMN004-25B is supplied in the SOT404 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404 (D2PAK)  
PIN  
DESCRIPTION  
tab  
tab  
1
2
gate  
drain1  
3
source  
drain  
2
tab  
1
3
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
Drain-source voltage  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
25  
25  
± 15  
V
V
V
Drain-gate voltage  
Continuous gate-source  
voltage  
VGSM  
ID  
Peak pulsed gate-source  
voltage  
Continuous drain current  
Tj 150 ˚C  
-
± 20  
V
Tmb = 25 ˚C; VGS = 5 V  
Tmb = 100 ˚C; VGS = 5 V  
Tmb = 25 ˚C  
-
-
-
-
752  
752  
240  
230  
175  
A
A
A
W
˚C  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
Tmb = 25 ˚C  
- 55  
1 It is not possible to make connection to pin:2 of the SOT404 package  
2 maximum continuous current limited by package  
October 1999  
1
Rev 1.100  

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