5秒后页面跳转
PSMN006-20K518 PDF预览

PSMN006-20K518

更新时间: 2024-02-26 20:42:58
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 261K
描述
Very low on-state resistance

PSMN006-20K518 数据手册

 浏览型号PSMN006-20K518的Datasheet PDF文件第2页浏览型号PSMN006-20K518的Datasheet PDF文件第3页浏览型号PSMN006-20K518的Datasheet PDF文件第4页浏览型号PSMN006-20K518的Datasheet PDF文件第5页浏览型号PSMN006-20K518的Datasheet PDF文件第6页浏览型号PSMN006-20K518的Datasheet PDF文件第7页 
PSMN006-20K  
TrenchMOS™ ultra low level FET  
Rev. 01 — 30 May 2002  
Product data  
1. Description  
SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve  
the lowest possible on-state resistance in a SOT96-1 (SO8) package.  
Product availability:  
PSMN006-20K in SOT96-1 (SO8).  
2. Features  
Very low on-state resistance  
Very low threshold  
TrenchMOS™ technology.  
3. Applications  
DC to DC converter  
Computer motherboards  
Switch mode power supplies.  
4. Pinning information  
Table 1:  
Pin  
Pinning - SOT96-1, simplified outline and symbol  
Description  
source (s)  
gate (g)  
Simplified outline  
Symbol  
1,2,3  
4
d
s
8
5
5,6,7,8  
drain (d)  
g
1
4
MBB076  
Top view  
MBK187  
SOT96-1 (SO8)  

与PSMN006-20K518相关器件

型号 品牌 获取价格 描述 数据表
PSMN008-75B NXP

获取价格

N-channel enhancement mode field-effect transistor
PSMN008-75B NEXPERIA

获取价格

N-channel TrenchMOS SiliconMAX standard level FETProduction
PSMN008-75P NXP

获取价格

N-channel enhancement mode field-effect transistor
PSMN008-75P,127 NXP

获取价格

N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin
PSMN009-100B NXP

获取价格

N-channel enhancement mode field-effect transistor
PSMN009-100B NEXPERIA

获取价格

N-channel TrenchMOS SiliconMAX standard level FETProduction
PSMN009-100B,118 NXP

获取价格

N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin
PSMN009-100P NXP

获取价格

N-channel enhancement mode field-effect transistor
PSMN009-100P NEXPERIA

获取价格

N-channel TrenchMOS SiliconMAX standard level FETProduction
PSMN009-100P,127 NXP

获取价格

N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin