Datasheet > PSMN006-20K,118

PSMN006-20K,118

更新时间： 2024-02-11 06:25:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	175K
描述
PSMN006-20K - N-channel TrenchMOS SiliconMAX ultra low level FET SOIC 8-Pin

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

PSMN006-20K,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOIC
针数：	8	Reach Compliance Code：	unknown
风险等级：	5.7	Base Number Matches：	1

PSMN006-20K,118 数据手册

PSMN006-20K

N-channel TrenchMOS SiliconMAX ultra low level FET

Rev. 01 — 17 November 2009

Product data sheet

1. Product profile

1.1 General description

SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in

a plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

Suitable for very low gate drive

on-state resistance

sources

1.3 Applications

Computer motherboards

DC-to-DC convertors

Switched-mode power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 150 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

T_sp= 25 °C; V_GS= 4.5 V;

see Figure 1 and 3

P_tot

total power

dissipation

T_sp= 25 °C; see Figure 2

8.3

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 2.5 V; I_D= 30 A;

V_DS= 10 V; T_j= 25 °C;

see Figure 11

13.2

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 2.5 V; I_D= 5 A;

T_j= 25 °C; see Figure 9 and 10

4.8

5.7

4.2

5.7

8.2

mΩ

V_GS= 1.8 V; I_D= 5 A;

T_j= 25 °C; see Figure 10

V_GS= 4.5 V; I_D= 5 A;

T_j= 25 °C; see Figure 9 and 10

12 3 4 5 6 7...12

中文翻译

下载PDF

与PSMN006-20K,118相关器件

型号	品牌	获取价格	描述	数据表
PSMN006-20K,518	NXP	获取价格	PSMN006-20K - N-channel TrenchMOS SiliconMAX ultra low level FET SOIC 8-Pin
PSMN006-20K518	NXP	获取价格	Very low on-state resistance
PSMN008-75B	NXP	获取价格	N-channel enhancement mode field-effect transistor
PSMN008-75B	NEXPERIA	获取价格	N-channel TrenchMOS SiliconMAX standard level FETProduction
PSMN008-75P	NXP	获取价格	N-channel enhancement mode field-effect transistor
PSMN008-75P,127	NXP	获取价格	N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin
PSMN009-100B	NXP	获取价格	N-channel enhancement mode field-effect transistor
PSMN009-100B	NEXPERIA	获取价格	N-channel TrenchMOS SiliconMAX standard level FETProduction
PSMN009-100B,118	NXP	获取价格	N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin
PSMN009-100P	NXP	获取价格	N-channel enhancement mode field-effect transistor