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PPF9140E PDF预览

PPF9140E

更新时间: 2024-11-21 19:54:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
2页 160K
描述
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-5

PPF9140E 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:CHIP CARRIER, R-PQCC-N3
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
配置:SINGLE最小漏源击穿电压:100 V
最大漏极电流 (ID):19 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PQCC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

PPF9140E 数据手册

 浏览型号PPF9140E的Datasheet PDF文件第2页 
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