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PPF440JE3 PDF预览

PPF440JE3

更新时间: 2024-11-25 19:47:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
2页 133K
描述
Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-257, 3 PIN

PPF440JE3 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code:unknown风险等级:5.84
配置:SINGLE最小漏源击穿电压:500 V
最大漏极电流 (ID):7 A最大漏源导通电阻:0.85 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-257AB
JESD-30 代码:S-XSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

PPF440JE3 数据手册

 浏览型号PPF440JE3的Datasheet PDF文件第2页 
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