生命周期: | Obsolete | 包装说明: | CHIP CARRIER, R-PQCC-N3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.72 | 配置: | SINGLE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 31 A |
最大漏源导通电阻: | 0.06 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PQCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 极性/信道类型: | P-CHANNEL |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PPF5305G | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF5305GE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF5305J | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF5305JE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF5305M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF5305ME3 | MICROSEMI |
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Power Field-Effect Transistor, 35A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF75N10 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
PPF75N10N | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
PPF75N10NE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
PPF75N10P | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |