是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, S-XSFM-P3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.92 | 配置: | SINGLE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 16 A |
最大漏源导通电阻: | 0.035 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AB | JESD-30 代码: | S-XSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PPF4905JE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 55V, 0.035ohm, 1-Element, P-Channel, Silicon, Met | |
PPF4905M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 55V, 0.03ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF4905ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 55V, 0.03ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF50N20P | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Met | |
PPF50N20PE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Met | |
PPF5210J | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 100V, 0.1ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF5210JE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 100V, 0.1ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF5305E | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF5305EE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF5305G | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta |