是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XSFM-P3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.92 | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-258AA | JESD-30 代码: | R-XSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PPF75N10NE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
PPF75N10P | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
PPF75N10PE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
PPF9130E | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
PPF9130EE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
PPF9130G | MICROSEMI |
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Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF9130GE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF9140E | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF9140EE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF9140G | MICROSEMI |
获取价格 |
暂无描述 |