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PPF75N10N PDF预览

PPF75N10N

更新时间: 2024-11-21 20:47:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
2页 134K
描述
Power Field-Effect Transistor, 50A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA

PPF75N10N 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.92配置:SINGLE
最小漏源击穿电压:100 V最大漏极电流 (ID):50 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-258AAJESD-30 代码:R-XSFM-P3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

PPF75N10N 数据手册

 浏览型号PPF75N10N的Datasheet PDF文件第2页 
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IC s  

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