生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, S-XSFM-P3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 22 A | 最大漏源导通电阻: | 0.23 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-XSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PPF24N50N | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met | |
PPF24N50NE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met | |
PPF24N50P | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met | |
PPF24N50PE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met | |
PPF250M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
PPF250ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
PPF260M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Met | |
PPF260ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Met | |
PPF3205J | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Met | |
PPF3205JE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Met |