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PPF3205PE3 PDF预览

PPF3205PE3

更新时间: 2024-11-26 05:50:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
2页 140K
描述
Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA

PPF3205PE3 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-P3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84配置:SINGLE
最小漏源击穿电压:55 V最大漏极电流 (ID):50 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-259AAJESD-30 代码:R-PSFM-P3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

PPF3205PE3 数据手册

 浏览型号PPF3205PE3的Datasheet PDF文件第2页 
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