Datasheet > PNZ123S

PNZ123S

更新时间： 2024-11-20 22:26:23

品牌	Logo	应用领域
松下 - PANASONIC		晶体光电晶体管光电晶体管
页数	文件大小	规格书
2页	46K
描述
Silicon NPN Phototransistor

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PNZ123S 数据手册

Phototransistors

PNZ123S

Silicon NPN Phototransistor

Unit : mm

ø3.0±0.2

For optical control systems

Can be combined with LN62S to form an photo interrupter

Features

High sensitivity

Low dark current

ø0.3±0.05

Fast response : t_r= 3.5 µs (typ.)

Small size (ø 3) ceramic package

ø0.45±0.05

0.9±0.15

Absolute Maximum Ratings (Ta = 25˚C)

1: Emitter

2: Collector

Parameter

Symbol

V_CEO

V_ECO

I_C

Ratings

Unit

Collector to emitter voltage

Emitter to collector voltage

Collector current

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

T_opr

–25 to +85

–30 to +100

T_stg

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

I_CEO

I_CE(L)

λ_P

Conditions

min

typ

max

100

700

Unit

µA

deg.

µs

V_CE= 10V

Collector photo current

Peak sensitivity wavelength

Acceptance half angle

Rise time

V_CE= 10V, L = 1000 lx^*1

400

V_CE= 10V

800

3.5

t_r^*2

t_f^*2

Measured from the optical axis to the half power point

V_CC= 10V, I_CE(L)= 1mA, R_L= 100Ω

Fall time

µs

^*1Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

中文翻译

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