5秒后页面跳转
PNZ123SQ PDF预览

PNZ123SQ

更新时间: 2024-11-25 19:55:15
品牌 Logo 应用领域
松下 - PANASONIC 光电
页数 文件大小 规格书
3页 195K
描述
Photo Transistor, 800nm, CERAMIC PACKAGE-2

PNZ123SQ 技术参数

生命周期:Obsolete包装说明:CERAMIC PACKAGE-2
Reach Compliance Code:unknownHTS代码:8541.40.70.80
风险等级:5.34Coll-Emtr Bkdn Voltage-Min:20 V
配置:SINGLE最大暗电源:100 nA
红外线范围:YES标称光电流:0.475 mA
功能数量:1最高工作温度:85 °C
最低工作温度:-25 °C光电设备类型:PHOTO TRANSISTOR
峰值波长:800 nm形状:ROUND
尺寸:3 mmBase Number Matches:1

PNZ123SQ 数据手册

 浏览型号PNZ123SQ的Datasheet PDF文件第2页浏览型号PNZ123SQ的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Phototransistors  
PNZ123S (PN123S)  
Silicon planar type  
Unit: mm  
φ3.0 0.2  
For optical control systems  
Features  
High sensitivity  
Low dark current  
Fast response: tr = 3 µs (typ.)  
Small size (φ3) ceramic package  
φ0.3 0.05  
φ0.45 0.05  
Absolute Maximum Ratings Ta = 25°C  
0.9 0.15  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-emitter voltage (Base open) VCEO  
Emitter-collector voltage (Base open) VECO  
20  
5
10  
V
2
1
Collector current  
IC  
mA  
mW  
°C  
1: Collector  
2: Emitter  
Collector power dissipation  
Operating ambient temperature  
Storage temperature  
PC  
50  
Topr  
Tstg  
25 to +85  
30 to +100  
°C  
Electrical-Optical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICE(L)  
ICEO  
λp  
Conditions  
VCE = 10 V, L = 1000 lx  
VCE = 10 V  
Min  
Typ  
Max  
1150  
100  
Unit  
µA  
nA  
nm  
°
1,  
2
*
Photocurrent *  
475  
Dark current  
1
Peak emission wavelength  
Half-power angle  
VCE = 10 V  
800  
30  
θ
The angle from which photocurrent  
becomes 50%  
3
Rise time *  
tr  
tf  
VCC = 10 V, ICE(L) = 1 mA, RL = 100 Ω  
3.5  
5.0  
µs  
µs  
3
Fall time *  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.  
3. This device is designed be disregarded radiation.  
5. 1: Source: Tungsten (color temperature 2856 K)  
*
2: Rank classification  
*
Rank  
ICE(L) (µA)  
Color  
Q
R
600 to 800  
S
T
U
475 to 650  
Purple  
710 to 870  
Blue  
800 to 1 000  
White  
900 to 1150  
Orange  
3: Switching time measurement circuit  
*
Sig. in  
VCC  
tr: Rise time  
tf: Fall time  
(Input pulse)  
90%  
10%  
Sig. out  
(Output pulse)  
50  
RL  
tr  
tf  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: June 2007  
SHE00016CED  
1

与PNZ123SQ相关器件

型号 品牌 获取价格 描述 数据表
PNZ123ST PANASONIC

获取价格

Photo Transistor, 800nm, CERAMIC PACKAGE-2
PNZ123SU PANASONIC

获取价格

Photo Transistor, 800nm, CERAMIC PACKAGE-2
PNZ126S PANASONIC

获取价格

Silicon NPN Phototransistor
PNZ126SQ PANASONIC

获取价格

Photo Transistor, 800nm
PNZ126SR PANASONIC

获取价格

Photo Transistor, 800nm
PNZ126SS PANASONIC

获取价格

Photo Transistor, 800nm
PNZ126ST PANASONIC

获取价格

Photo Transistor, 800nm
PNZ126SU PANASONIC

获取价格

Photo Transistor, 800nm
PNZ1270 PANASONIC

获取价格

Silicon NPN Phototransistor
PNZ1270Q PANASONIC

获取价格

Photo Transistor, 800nm