Datasheet > PNZ1270

PNZ1270

更新时间： 2024-11-20 22:26:23

品牌	Logo	应用领域
松下 - PANASONIC		晶体光电晶体管光电晶体管
页数	文件大小	规格书
2页	48K
描述
Silicon NPN Phototransistor

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中文翻译

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技术参数
数据手册

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PNZ1270 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Coll-Emtr Bkdn Voltage-Min：	20 V
配置：	SINGLE	最大暗电源：	100 nA
红外线范围：	YES	标称光电流：	0.8 mA
功能数量：	1	最高工作温度：	85 °C
最低工作温度：	-25 °C	光电设备类型：	PHOTO TRANSISTOR
峰值波长：	800 nm	形状：	ROUND
尺寸：	1.8 mm	Base Number Matches：	1

PNZ1270 数据手册

Phototransistors

PNZ1270

Silicon NPN Phototransistor

Unit : mm

For optical control systems

Type number : Emitter mark (Blue)

10.0 min.

3.2±0.3 3.2±0.3

Features

High sensitivity

ø1.8

Good collector photo current linearity with respect to optical

power input

45˚

1.8 2.8±0.2 1.8

Fast response : t_r= 2.5 µs (typ.)

Small size designed for easier mounting to printed circuit board

R0.9

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

V_ECO

I_C

Ratings

Unit

Collector to emitter voltage

Emitter to collector voltage

Collector current

1: Collector

2: Emitter

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

T_opr

–25 to +85

–30 to +100

T_stg

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

Conditions

min

typ

max

Unit

I_CEO

V_CE= 10V

100

Collector photo current

Peak sensitivity wavelength

Acceptance half angle

Rise time

I_CE(L)

V_CE= 10V, L = 1000 lx^*1

0.8

19.2

deg.

µs

λ_P

V_CE= 10V

800

Measured from the optical axis to the half power point

t_r^*2

t_f^*2

2.5

3.5

V_CC= 10V, I_CE(L)= 1mA, R_L= 100Ω

Fall time

µs

^*1Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Classifications

Class

CE(L)

I_CE(L)(mA)

0.8 to 2.4

1.6 to 4.8

3.2 to 9.6

6.4 to 19.2

中文翻译

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