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PNZ150L PDF预览

PNZ150L

更新时间: 2024-11-20 22:26:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体光电晶体管光电晶体管
页数 文件大小 规格书
2页 49K
描述
Silicon NPN Phototransistor

PNZ150L 数据手册

 浏览型号PNZ150L的Datasheet PDF文件第2页 
Phototransistors  
PNZ150L  
Silicon NPN Phototransistor  
Unit : mm  
4.2±0.3  
4.5±0.3  
For optical control systems  
ø3.5±0.2  
2.3  
1.9  
Features  
High sensitivity  
1.2  
2-1.12  
2-0.45±0.15  
0.4±0.15  
Wide spectral sensitivity, suited for detecting GaAs LEDs  
Low dark current  
Small size, thin side-view type package  
2-0.6±0.15  
2-0.45±0.15  
1
2
2.54  
R1.75  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol  
VCEO  
IC  
Ratings  
20  
Unit  
V
1: Emitter  
2: Collector  
Collector to emitter voltage  
Collector current  
20  
mA  
mW  
˚C  
Collector power dissipation  
Operating ambient temperature  
Storage temperature  
PC  
100  
Topr  
–25 to +85  
–30 to +100  
Tstg  
˚C  
Electro-Optical Characteristics (Ta = 25˚C)  
Parameter  
Dark current  
Symbol  
Conditions  
min  
typ  
max  
Unit  
µA  
µA  
V
ICEO  
VCEO = 10V  
VCE = 10V, H = 15µW/cm2  
0.01  
0.2  
*1  
Sensitivity to infrared emitters  
Collector saturation voltage VCE(sat) VCE = 10V, H = 15µW/cm2  
SIR  
16  
0.2  
800  
4
0.5  
Peak sensitivity wavelength  
Response time  
λP  
tr, tf*2  
θ
VCEO = 10V  
nm  
µs  
VCC = 10V, ICE(L) = 5mA, RL = 100Ω  
Acceptance half angle  
Measured from the optical axis to the half power point  
35  
deg.  
*1 Measurements were made using infrared light (λ = 940 nm) as a light source.  
*2 Response time measurement circuit  
Sig.IN  
VCC  
td : Delay time  
(Input pulse)  
tr : Rise time (Time required for the collector photo current to  
increase from 10% to 90% of its final value)  
90%  
10%  
Sig.OUT  
(Output pulse)  
td  
tf : Fall time (Time required for the collector photo current to  
decrease from 90% to 10% of its initial value)  
50  
RL  
tr  
tf  
1

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