Datasheet > PNZ154(PN154)

PNZ154(PN154)

更新时间： 2024-11-20 23:28:59

品牌	Logo	应用领域
其他 - ETC		晶体光电晶体管光电晶体管
页数	文件大小	规格书
3页	54K
描述
PNZ154 (PN154) - Silicon NPN Phototransistor

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PNZ154(PN154) 数据手册

Phototransistors

PNZ154 (PN154)

Silicon NPN Phototransistor

Unit : mm

2.9±0.25

For optical control systems

4.5±0.3

1.2

1.7±0.2

ø2.2

0.9

0.8

Features

High sensitivity

Fast response : t_r= 4 µs (typ.)

Wide spectral sensitivity, suited for detecting various kinds of LEDs

Small size, thin side-view type package

2-1.2±0.3

2-0.45±0.15

0.45±0.15

2.54±0.2

R0.8

R0.6

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

I_C

Ratings

Unit

1: Emitter

2: Collector

Collector to emitter voltage

Collector current

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

100

T_opr

–25 to +85

–30 to +100

T_stg

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

I_CEO

I_CE(L)

λ_P

Conditions

min

typ

0.01

max

Unit

µA

deg.

µs

V_CE= 10V

0.2

Collector photo current

Peak sensitivity wavelength

Acceptance half angle

Response time

V_CE= 10V, L = 500 lx^*1

V_CE= 10V

800

Measured from the optical axis to the half power point

t_r, t_f^*2

V_CC= 10V, I_CE(L)= 5mA, R_L= 100Ω

Collector saturation voltage V_CE(sat)I_CE(L)= 1mA, L = 1000 lx^*1

0.2

0.5

^*1Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Note) The part number in the parenthesis shows conventional part number.

12 3

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