5秒后页面跳转
PNZ1270S PDF预览

PNZ1270S

更新时间: 2024-11-21 19:20:39
品牌 Logo 应用领域
松下 - PANASONIC 光电
页数 文件大小 规格书
3页 170K
描述
Photo Transistor, 800nm

PNZ1270S 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84Coll-Emtr Bkdn Voltage-Min:20 V
配置:SINGLE最大暗电源:100 nA
红外线范围:YES标称光电流:3.2 mA
功能数量:1最高工作温度:85 °C
最低工作温度:-25 °C光电设备类型:PHOTO TRANSISTOR
峰值波长:800 nm形状:ROUND
尺寸:1.8 mmBase Number Matches:1

PNZ1270S 数据手册

 浏览型号PNZ1270S的Datasheet PDF文件第2页浏览型号PNZ1270S的Datasheet PDF文件第3页 
Phototransistors  
PNZ1270  
Silicon NPN Phototransistor  
Unit : mm  
For optical control systems  
Type number : Emitter mark (Blue)  
10.0 min.  
10.0 min.  
3.2±0.3 3.2±0.3  
Features  
High sensitivity  
ø1.8  
1
2
Good collector photo current linearity with respect to optial  
power input  
45˚  
8 2.8±0.2 1.8  
Fast response : tr = 2.5 µs (typ.)  
Small size designed for easier mounting to printed ircuit bord  
R0.9  
Absolute Maximum Ratings Ta = 25˚C
Parameter  
Symol  
CEO  
VEC
IC  
Ratings  
Unit  
V
Collector to emitter voltage  
Emitter to collector oltage  
Collector current  
20  
1: Collector  
2: Emitter  
20  
V
mA  
mW  
˚C  
Collector power dissiation  
Operating ambietemperatue  
Storage temerate  
PC  
50  
Topr  
25 to +85  
30 to +100  
˚C  
Electro-OpticaCharacteristics (Ta = 25˚C)  
Paramter  
Dar
Symbol  
Conditions  
min  
typ  
max  
Unit  
nA  
ICEO  
VCE = 10V  
1
100  
*3  
Ccurrent  
Peak wavelength  
Acceptanhalf angle  
Rise time  
ICE(L)  
VCE = 10V, L = 1000 lx*1  
0.8  
19.2  
mA  
nm  
deg.  
µs  
λP  
VCE = 10V  
800  
14  
θ
Measured from the optical axis to the half power pint  
tr*2  
tf*2  
2.5  
3.5  
VCC = 10V, ICE(L) = 1mA, RL = 100Ω  
Fall time  
µs  
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.  
*2 Switching time measurement circuit  
Sig.IN  
VCC  
td : Delay time  
(Input pulse)  
tr : Rise time (Time required for the collector photo current to  
increase from 10% to 90% of its final value)  
90%  
10%  
Sig.OUT  
(Output pulse)  
td  
tf : Fall time (Time required for the collector photo current to  
decrease from 90% to 10% of its initial value)  
50  
RL  
tr  
tf  
*3  
I
Classifications  
Class  
CE(L)  
Q
R
S
T
ICE(L) (mA)  
0.8 to 2.4  
1.6 to 4.8  
3.2 to 9.6  
6.4 to 19.2  
1

与PNZ1270S相关器件

型号 品牌 获取价格 描述 数据表
PNZ1270T PANASONIC

获取价格

Photo Transistor, 800nm
PNZ147 PANASONIC

获取价格

Silicon planar type
PNZ147(PN147) ETC

获取价格

光デバイス - 受光素子 - フォトトランジスタ
PNZ147Q ETC

获取价格

PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | LED-8C
PNZ147R ETC

获取价格

PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | LED-8C
PNZ147S ETC

获取价格

PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | LED-8C
PNZ150 PANASONIC

获取价格

Silicon planar type For optical control systems
PNZ150(PN150) ETC

获取价格

PNZ150 (PN150) - Silicon NPN Phototransistor
PNZ150L PANASONIC

获取价格

Silicon NPN Phototransistor
PNZ150L(PN150L) ETC

获取价格

PNZ150L (PN150L) - Silicon NPN Phototransistor