Datasheet > PNZ147Q

PNZ147Q

更新时间： 2024-11-20 23:28:59

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描述
PHOTOTRANSISTOR \| NPN \| 800NM PEAK WAVELENGTH \| 20M \| LED-8C

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PNZ147Q 数据手册

Phototransistors

PNZ147 (PN147)

Silicon NPN Phototransistor

Unit : mm

For optical control systems

Type number : Emitter mark (Green)

10.0 min.

3.2±0.3 3.2±0.3

Features

High sensitivity

ø1.8

Wide spectral sensitivity, matched to GaAs LEDs

Fast response : t_r, t_f= 3 µs (typ.)

45˚

1.8 2.8±0.2 1.8

Small size designed for easier mounting to printed circuit board

R0.9

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

V_ECO

I_C

Ratings

Unit

Collector to emitter voltage

Emitter to collector voltage

Collector current

1: Collector

2: Emitter

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

T_opr

–25 to +85

–30 to +100

T_stg

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

Conditions

min

typ

0.01

max

Unit

µA

deg.

µs

I_CEO

V_CE= 10V

0.5

I_CE(L)1

V_CE= 10V, L = 2 lx^*1

V_CE= 10V, L = 500 lx^*1

V_CE= 10V

Collector photo current

I_CE(L)2

λ_P

3.5

800

Peak sensitivity wavelength

Acceptance half angle

Response time

Measured from the optical axis to the half power point

t_r, t_f^*2

V_CC= 10V, I_CE(L)= 5mA, R_L= 100Ω

Collector saturation voltage V_CE(sat)I_CE(L)= 1mA, L = 1000 lx^*1

0.2

0.5

^*1Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Classifications

Class

CE(L)

I_CE(L)(µA)

3.0 to 11.0

7.0 to 24.0

>16.0

Note) The part number in the parenthesis shows conventional part number.

12 3

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