Datasheet > PMV185XN,215

PMV185XN,215

更新时间： 2024-02-07 17:24:22

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	206K
描述
PMV185XN - 30 V, single N-channel Trench MOSFET TO-236 3-Pin

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技术参数
数据手册

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PMV185XN,215 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TO-236	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

PMV185XN,215 数据手册

NXP Semiconductors

PMV185XN

30 V, single N-channel Trench MOSFET

017aaa732

Limit R

= V /I

DSon

(A)

= 100 µs

= 1 ms

= 10 ms

DC; T = 25 °C

-1

DC; T

= 25 °C;

drain mounting pad 6 cm

amb

-2

-1

(V)

I_DM= single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

6. Thermal characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

333

240

203

Max

385

275

235

100

Unit

K/W

R_th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

[2]

in free air; t ≤ 5 s

R_th(j-sp)

thermal resistance

from junction to solder

point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm².

PMV185XN

All information provided in this document is subject to legal disclaimers.

Product data sheet

3 August 2012

4 / 14

1 2 345 6 7...14

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