Datasheet > PMV22EN,215

PMV22EN,215

更新时间： 2024-02-06 06:39:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	811K
描述
PMV22EN - 30 V, 5.2 A N-channel Trench MOSFET TO-236 3-Pin

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技术参数
数据手册

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PMV22EN,215 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-236
包装说明：	PLASTIC PACKAGE-3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

PMV22EN,215 数据手册

PMV22EN

T23

30 V, 5.2 A N-channel Trench MOSFET

Rev. 1 — 30 March 2011

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

 Logic-level compatible

 Very fast switching

 Trench MOSFET technology

1.3 Applications

 Relay driver

 Low-side loadswitch

 Switching circuits

 High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_amb= 25 °C

5.2

V_GS

I_D

gate-source

voltage

-20

[1]

drain current

V_GS= 10 V; T_amb= 25 °C

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 5.2 A; pulsed;

mΩ

on-state

t_p≤ 300 µs; δ ≤ 0.01; T_j= 25 °C

resistance

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

12 3 4 5 6 7...14

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