Datasheet > PMV185XN,215

PMV185XN,215

更新时间： 2024-01-23 22:06:05

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	206K
描述
PMV185XN - 30 V, single N-channel Trench MOSFET TO-236 3-Pin

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技术参数
数据手册

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PMV185XN,215 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TO-236	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

PMV185XN,215 数据手册

NXP Semiconductors

PMV185XN

30 V, single N-channel Trench MOSFET

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

gate

source

drain

TO-236AB (SOT23)

017aaa253

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PMV185XN

TO-236AB

plastic surface-mounted package; 3 leads

SOT23

4. Marking

Table 4.

Marking codes

Type number

Marking code

[1]

PMV185XN

EH%

[1] % = placeholder for manufacturing site code

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_amb= 25 °C

V_GS

-12

I_D

V_GS= 4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 4.5 V; T_amb= 25 °C

V_GS= 4.5 V; T_amb= 100 °C

T_amb= 25 °C; single pulse; t_p≤ 10 µs

T_amb= 25 °C

[1]

1.2

1.1

0.7

4.4

325

455

I_DM

P_tot

peak drain current

total power dissipation

[2]

[1]

T_sp= 25 °C

1275 mW

PMV185XN

All information provided in this document is subject to legal disclaimers.

Product data sheet

3 August 2012

2 / 14

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