Datasheet > PMV20EN

PMV20EN

更新时间： 2023-09-03 20:32:22

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	316K
描述
30 V, N-channel Trench MOSFETProduction

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PMV20EN 数据手册

PMV20EN

30 V, N-channel Trench MOSFET

5 July 2018

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Logic level compatible

•

Very fast switching

Trench MOSFET technology

Enhanced power dissipation capability of 1200 mW

3. Applications

•

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= 10 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 10 V; I_D= 6 A; T_j= 25 °C

[1]

7.6

Static characteristics

R_DSondrain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

12 3 4 5 6 7...15

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