Datasheet > PMV280ENEA

PMV280ENEA

更新时间： 2023-09-03 20:30:40

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	263K
描述
100 V, N-channel Trench MOSFETProduction

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PMV280ENEA 数据手册

PMV280ENEA

100 V, N-channel Trench MOSFET

11 April 2019

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Logic-level compatible

•

Extended temperature range T_j= 175 °C

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)

AEC-Q101 qualified

3. Applications

•

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

100

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= 10 V; T_amb= 25 °C

[1]

1.1

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 1.1 A; T_j= 25 °C

285

385

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...15

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