Datasheet > PMV27UPEA

PMV27UPEA

更新时间： 2023-09-03 20:30:09

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	854K
描述
20 V, P-channel Trench MOSFETProduction

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PMV27UPEA 数据手册

PMV27UPEA

20 V, P-channel Trench MOSFET

30 October 2015

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability: P_tot= 980 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

•

3. Applications

LED driver

•

Power management

High-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

-20

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-8

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -4.5 V; I_D= -4.5 A; T_j= 25 °C

[1]

-5.6

Static characteristics

R_DSondrain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

12 3 4 5 6 7...16

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