生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.37 |
配置: | SINGLE | 最小漏源击穿电压: | 30 V |
最大漏源导通电阻: | 85 Ω | FET 技术: | JUNCTION |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBFJ174-TAPE-7 | NXP |
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TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | |
PMBFJ174TRL | NXP |
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TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | |
PMBFJ174TRL13 | NXP |
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TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | |
PMBFJ175 | PHILIPS |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET, | |
PMBFJ175 | NXP |
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P-channel silicon field-effect transistors | |
PMBFJ175,215 | NXP |
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P-channel FET TO-236 3-Pin | |
PMBFJ175-T | NXP |
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暂无描述 | |
PMBFJ175T/R | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 7MA I(DSS) | TO-236 | |
PMBFJ175-TAPE-13 | NXP |
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TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | |
PMBFJ175-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal |