是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.82 | FET 技术: | JUNCTION |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.3 W |
子类别: | FET General Purpose Small Signal | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBFJ175,215 | NXP |
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P-channel FET TO-236 3-Pin | |
PMBFJ175-T | NXP |
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暂无描述 | |
PMBFJ175T/R | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 7MA I(DSS) | TO-236 | |
PMBFJ175-TAPE-13 | NXP |
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TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | |
PMBFJ175-TAPE-7 | NXP |
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TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | |
PMBFJ175TRL | NXP |
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TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | |
PMBFJ175TRL13 | NXP |
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TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | |
PMBFJ176 | NXP |
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P-channel silicon field-effect transistors | |
PMBFJ176,215 | NXP |
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P-channel FET TO-236 3-Pin | |
PMBFJ176-T | NXP |
获取价格 |
TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET Gener |