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PMBFJ174TRL PDF预览

PMBFJ174TRL

更新时间: 2024-01-30 21:02:49
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
6页 38K
描述
TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal

PMBFJ174TRL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.37Is Samacsys:N
配置:SINGLE最小漏源击穿电压:30 V
最大漏源导通电阻:85 ΩFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PMBFJ174TRL 数据手册

 浏览型号PMBFJ174TRL的Datasheet PDF文件第2页浏览型号PMBFJ174TRL的Datasheet PDF文件第3页浏览型号PMBFJ174TRL的Datasheet PDF文件第4页浏览型号PMBFJ174TRL的Datasheet PDF文件第5页浏览型号PMBFJ174TRL的Datasheet PDF文件第6页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PMBFJ174 to 177  
P-channel silicon field-effect  
transistors  
April 1995  
Product specification  
File under Discrete Semiconductors, SC07  

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