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PMBFJ113,215 PDF预览

PMBFJ113,215

更新时间: 2024-01-12 17:05:22
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
9页 92K
描述
N-channel FET TO-236 3-Pin

PMBFJ113,215 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-236包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.74配置:SINGLE
最小漏源击穿电压:40 V最大漏源导通电阻:100 Ω
FET 技术:JUNCTIONJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PMBFJ113,215 数据手册

 浏览型号PMBFJ113,215的Datasheet PDF文件第2页浏览型号PMBFJ113,215的Datasheet PDF文件第3页浏览型号PMBFJ113,215的Datasheet PDF文件第4页浏览型号PMBFJ113,215的Datasheet PDF文件第5页浏览型号PMBFJ113,215的Datasheet PDF文件第6页浏览型号PMBFJ113,215的Datasheet PDF文件第7页 
PMBFJ111; PMBFJ112;  
PMBFJ113  
T23  
SO  
N-channel junction FETs  
Rev. 4 — 20 September 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Symmetrical N-channel junction FETs in a SOT23 package.  
1.2 Features and benefits  
High-speed switching  
Interchangeability of drain and source connections  
Low RDSon at zero gate voltage (< 30 for PMBFJ111).  
1.3 Applications  
Analog switches  
Choppers  
Commutators  
Multiplexers  
Thin and thick film hybrids.  
2. Pinning information  
Table 1.  
Pinning  
Pin  
1
Description[1]  
Simplified outline  
Symbol  
drain  
3
2
source  
3
gate  
1
2
3
1
2
sym053  
[1] Drain and source are interchangeable.  
 
 
 
 
 
 

PMBFJ113,215 替代型号

型号 品牌 替代类型 描述 数据表
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