生命周期: | Obsolete | 包装说明: | R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.84 |
配置: | COMMON CATHODE, 2 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 1.2 V |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 2 |
端子数量: | 3 | 最大输出电流: | 0.1 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大反向恢复时间: | 0.015 µs | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBD2838 | NXP |
获取价格 |
High-speed double diodes | |
PMBD2838212 | NXP |
获取价格 |
DIODE 0.215 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | |
PMBD2838215 | NXP |
获取价格 |
DIODE 0.215 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | |
PMBD2838235 | NXP |
获取价格 |
DIODE 0.215 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | |
PMBD2838-T | NXP |
获取价格 |
DIODE 0.215 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | |
PMBD2838TRL | YAGEO |
获取价格 |
Rectifier Diode, 2 Element, 0.1A, Silicon | |
PMBD352 | YAGEO |
获取价格 |
Rectifier Diode, Schottky, 2 Element, 0.01A, Silicon | |
PMBD352-T | NXP |
获取价格 |
DIODE 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | |
PMBD352T/R | NXP |
获取价格 |
PMBD352T/R | |
PMBD352TRL | YAGEO |
获取价格 |
Rectifier Diode, Schottky, 2 Element, 0.01A, Silicon |