是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.59 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTA114YU,115 | NXP |
获取价格 |
PDTA114Y series - PNP resistor-equipped trans | |
PDTA115E | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
PDTA115EE | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
PDTA115EE,115 | NXP |
获取价格 |
PDTA115E series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm SC-75 3- | |
PDTA115EEF | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
PDTA115EK | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
PDTA115EM | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
PDTA115EM | NEXPERIA |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhmProduction | |
PDTA115EM,315 | NXP |
获取价格 |
PDTA115E series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm DFN 3-Pi | |
PDTA115EMB | NXP |
获取价格 |
20mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA |