是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-92 | 包装说明: | PLASTIC, SC-43A, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.69 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.02 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.5 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | NO |
端子面层: | TIN | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTA115ET | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
PDTA115ET | NEXPERIA |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhmProduction | |
PDTA115ET,215 | NXP |
获取价格 |
PDTA115E series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm TO-236 3 | |
PDTA115EU | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
PDTA115EU | NEXPERIA |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhmProduction | |
PDTA115EU,115 | NXP |
获取价格 |
PDTA115E series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm SC-70 3- | |
PDTA115EU-Q | NEXPERIA |
获取价格 |
PNP resistor-equipped transistor; R1 = 100 kΩ | |
PDTA115T | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = open | |
PDTA115TE | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = open | |
PDTA115TE,115 | NXP |
获取价格 |
TRANS PREBIAS PNP 150MW SC75 |