是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SC-70 | 包装说明: | PLASTIC, SC-70, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.35 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.25 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MUN5111T1G | ONSEMI |
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PDTA115E | NXP |
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PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
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20mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA | |
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获取价格 |
PNP resistor-equipped transistor; R1 = 100 kΩ |