Datasheet > PDM4M4110S25M

PDM4M4110S25M

更新时间： 2024-01-31 04:53:49

品牌	Logo	应用领域
IXYS		静态存储器
页数	文件大小	规格书
10页	215K
描述
SRAM Module, 512KX32, 25ns, CMOS, SIMM-72

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中文翻译

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技术参数
数据手册

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PDM4M4110S25M 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SIMM
包装说明：	,	针数：	72
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.78
Base Number Matches：	1

PDM4M4110S25M 数据手册

PRELIMINARY

PDM4M4110

Truth Table

Mode

Output

Power

Deselect/

Power-down

High-Z

Standby

Read

DATA

Active

OUT

Write

DATA

Deselect

High-Z

(1)

Absolute Maximum Ratings

Symbol

Rating

Com’l.

Ind.

Unit

Terminal Voltage with Respect to V

Temperature Under Bias

Storage Temperature

–0.5 to +7.0

–10 to +85

–55 to +125

0 to +70

1.0

–0.5 to +7.0

–10 to +85

–65 to +150

0 to +70

1.0

°C

TERM

BIAS

STG

Operating Temperature

Power Dissipation

DC Output Current

OUT

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device.This is a stress rating only and functional operation of the device at these or

any other conditions above those indicated in the operational sections of this speciﬁcation is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

Recommended DC Operating Conditions

Symbol

Parameter

Min.

Typ.

Max.

Unit

Supply Voltage

4.5

5.0

5.5

Supply Voltage

Commercial

Ambient Temperature

°C

Rev 2.3 - 1/15/96

8-67

1 234 5 6 7...10

中文翻译

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