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PC28F128P30T85 PDF预览

PC28F128P30T85

更新时间: 2024-09-19 22:24:59
品牌 Logo 应用领域
英特尔 - INTEL 存储
页数 文件大小 规格书
102页 1616K
描述
Intel StrataFlash Embedded Memory

PC28F128P30T85 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BGA包装说明:TBGA, BGA64,8X8,40
针数:64Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.64最长访问时间:85 ns
其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PBGA-B64
JESD-609代码:e1长度:13 mm
内存密度:134217728 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:4,127端子数量:64
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:TBGA
封装等效代码:BGA64,8X8,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE页面大小:4 words
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:1.8,1.8/3.3 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:16K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.051 mA
最大供电电压 (Vsup):2 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:40切换位:NO
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

PC28F128P30T85 数据手册

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®
Intel StrataFlash Embedded Memory  
(P30)  
1-Gbit P30 Family  
Datasheet  
Product Features  
High performance  
Security  
— One-Time Programmable Registers:  
— 85/88 ns initial access  
• 64 unique factory device identifier bits  
• 64 user-programmable OTP bits  
• Additional 2048 user-programmable OTP bits  
— Selectable OTP Space in Main Array:  
• 4x32KB parameter blocks + 3x128KB main  
blocks (top or bottom configuration)  
— Absolute write protection: VPP = VSS  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
— 40 MHz with zero wait states, 20 ns clock-to-  
data output synchronous-burst read mode  
— 25 ns asynchronous-page read mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Buffered Enhanced Factory Programming  
(BEFP) at 5 µs/byte (Typ)  
— 1.8 V buffered programming at 7 µs/byte (Typ)  
Architecture  
— Multi-Level Cell Technology: Highest Density  
at Lowest Cost  
Software  
— Asymmetrically-blocked architecture  
— Four 32-KByte parameter blocks: top or  
bottom configuration  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
— Intel® Flash Data Integrator optimized  
— Basic Command Set and Extended Command  
Set compatible  
— 128-KByte main blocks  
Voltage and Power  
— VCC (core) voltage: 1.7 V – 2.0 V  
— VCCQ (I/O) voltage: 1.7 V – 3.6 V  
— Standby current: 55 µA (Typ) for 256-Mbit  
— 4-Word synchronous read current:  
13 mA (Typ) at 40 MHz  
— Common Flash Interface capable  
Density and Packaging  
— 64/128/256-Mbit densities in 56-Lead TSOP  
package  
— 64/128/256/512-Mbit densities in 64-Ball  
Intel® Easy BGA package  
— 64/128/256/512-Mbit and 1-Gbit densities in  
Intel® QUAD+ SCSP  
Quality and Reliability  
— Operating temperature: –40 °C to +85 °C  
• 1-Gbit in SCSP is –30 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology (130 nm)  
— 16-bit wide data bus  
The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of Intel  
StrataFlash® memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device  
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.  
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR  
device, and support for code and data storage. Features include high-performance synchronous-  
burst read mode, fast asynchronous access times, low power, flexible security options, and three  
industry standard package choices.  
The P30 product family is manufactured using Intel® 130 nm ETOX™ VIII process technology.  
Order Number: 306666, Revision: 001  
April 2005  

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