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PC28F128P33BF60D PDF预览

PC28F128P33BF60D

更新时间: 2024-11-28 14:59:03
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
88页 3952K
描述
Legacy NOR Flash

PC28F128P33BF60D 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:BGA, BGA64,8X8,40Reach Compliance Code:compliant
风险等级:5.76最长访问时间:60 ns
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:S-PBGA-B64内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:4,127端子数量:64
字数:8388608 words字数代码:8000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA64,8X8,40
封装形状:SQUARE封装形式:GRID ARRAY
页面大小:8 words并行/串行:PARALLEL
电源:2.5/3.3 V认证状态:Not Qualified
部门规模:16K,64K最大待机电流:0.002 A
子类别:Flash Memories最大压摆率:0.028 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
切换位:NO类型:NOR TYPE
Base Number Matches:1

PC28F128P33BF60D 数据手册

 浏览型号PC28F128P33BF60D的Datasheet PDF文件第2页浏览型号PC28F128P33BF60D的Datasheet PDF文件第3页浏览型号PC28F128P33BF60D的Datasheet PDF文件第4页浏览型号PC28F128P33BF60D的Datasheet PDF文件第5页浏览型号PC28F128P33BF60D的Datasheet PDF文件第6页浏览型号PC28F128P33BF60D的Datasheet PDF文件第7页 
®
Numonyx P33-65nm Flash Memory  
128-Mbit, 64-Mbit Single Bit per Cell (SBC)  
Datasheet  
Product Features  
„
High performance:  
„
Security:  
— 60ns initial access time for Easy BGA  
— 70ns initial access time for TSOP  
— 25ns 8-word asynchronous-page read  
mode  
— 52MHz with zero wait states, 17ns clock-to-  
data output synchronous-burst read mode  
— 4-, 8-, 16-, and continuous-word options  
for burst mode  
— One-Time Programmable Registers:  
— 64 OTP bits, programmed with unique  
information by Numonyx  
— 2112 OTP bits, available for customer  
programming  
— Absolute write protection: VPP = VSS  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down capability  
— Password Access feature  
— 3.0V buffered programming at 1.8MByte/s  
(Typ) using 256-word buffer  
— Buffered Enhanced Factory Programming at  
3.2MByte/s (typ) using 256-word buffer  
„
Software:  
— 20µs (Typ) program suspend  
— 20µs (Typ) erase suspend  
— Basic Command Set and Extended Function  
Interface (EFI) Command Set compatible  
„
Architecture:  
— Asymmetrically-blocked architecture  
— Four 32-KByte parameter blocks: top or  
bottom configuration  
— 128-KByte main blocks  
— Common Flash Interface capable  
„
Density and Packaging:  
— Blank Check to verify an erased block  
— 56-Lead TSOP package (128-Mbit, 64-Mbit)  
— 64-Ball Easy BGA package (128-Mbit, 64-  
Mbit)  
„
Voltage and Power:  
— VCC (core) voltage: 2.3V – 3.6V  
— VCCQ (I/O) voltage: 2.3V – 3.6V  
— 16-bit wide data bus  
— Standby current: 35μA(Typ) for 64-Mbit,  
50μA(Typ) for 128-Mbit  
„
Quality and Reliability:  
— JESD47E Compliant  
— Continuous synchronous read current:  
23mA (Typ) at 52 MHz  
— Operating temperature: –40°C to +85°C  
— Minimum 100,000 erase cycles per block  
— 65nm process technology  
Datasheet  
1
Jul 2011  
Order Number: 208034-04  

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