Datasheet > PC28F256G18FF

PC28F256G18FF

更新时间： 2024-11-27 12:46:47

品牌	Logo	应用领域
镁光 - MICRON		存储
页数	文件大小	规格书
118页	1154K
描述
128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PC28F256G18FF 数据手册

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

Features

Micron StrataFlash Embedded Memory

P/N – PC28F128G18xx

P/N – PC28F256G18xx

P/N – PC28F512G18xx

P/N – PC28F00AG18xx

• Power

– Core voltage: 1.7 V - 2.0 V

– I/O voltage: 1.7 V - 2.0 V

– Standby current: 60 μA (typ) for 512-Mbit, 65 nm

– Deep Power-Down mode: 2 μA (typ)

– Automatic Power Savings mode

– 16-word synchronous-burst read current: 23 mA

(typ) @ 108 MHz; 24 mA (typ) @ 133 MHz

• Software

Features

• High-Performance Read, Program and Erase

– 96 ns initial read access

– 108 MHz with zero wait-state synchronous burst

reads: 7 ns clock-to-data output

– 133 MHz with zero wait-state synchronous burst

reads: 5.5 ns clock-to-data output

– 8-, 16-, and continuous-word synchronous-burst

Reads

– Programmable WAIT configuration

– Customer-configurable output driver impedance

– Buffered Programming: 2.0 μs/Word (typ), 512-

Mbit 65 nm

– Micron^®Flash data integrator (FDI) optimized

– Basic command set (BCS) and extended com-

mand set (ECS) compatible

– Common Flash interface (CFI) capable

• Security

– Block Erase: 0.9 s per block (typ)

– 20 μs (typ) program/erase suspend

• Architecture

– 16-bit wide data bus

– Multi-Level Cell Technology

– One-time programmable (OTP) space

64 unique factory device identifier bits

2112 user-programmable OTP bits

– Absolute write protection: V_PP= GND

– Power-transition erase/program lockout

– Individual zero latency block locking

– Individual block lock-down

– Symmetrically-Blocked Array Architecture

– 256-Kbyte Erase Blocks

– 1-Gbit device: Eight 128-Mbit partitions

– 512-Mbit device: Eight 64-Mbit partitions

– 256-Mbit device: Eight 32-Mbit partitions

– 128-Mbit device: Eight 16-Mbit partitions

– Read-While-Program and Read-While-Erase

– Status Register for partition/device status

– Blank Check feature

• Density and packaging

– 128Mb, 256Mb, 512Mbit, and 1-Gbit

– Address-data multiplexed and non-multiplexed

interfaces

– 64-Ball Easy BGA

• Quality and Reliability

– Expanded temperature: –30 °C to +85 °C

– Minimum 100,000 erase cycles per block

– 65nm Process Technology

PDF: 09005aef8448483a

128_256_512_65nm_g18.pdf - Rev. F 8/11 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...118

中文翻译

下载PDF

与PC28F256G18FF相关器件

型号	品牌	获取价格	描述	数据表
PC28F256J3A-110	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3A-115	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3A-120	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3A-125	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3A-150	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3C-110	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3C-115	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3C-120	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3C125	INTEL	获取价格	Intel StrataFlashÂ® Memory
PC28F256J3C-125	INTEL	获取价格	Intel StrataFlash Memory (J3)

与PC28F256G18FF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

PC28F256G18FF

PC28F256G18FF 数据手册

与PC28F256G18FF相关器件

与PC28F256G18FF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PC28F256G18FF

PC28F256G18FF 数据手册

与PC28F256G18FF相关器件

与PC28F256G18FF相关文章

您还可以找

您在本页遇到什么问题？